发明名称 SUBSTRATE FOR POWER MODULE, MANUFACTURING METHOD THEREFOR, AND POWER MODULE
摘要 PROBLEM TO BE SOLVED: To provide a substrate for power module in which the electrical resistance between a semiconductor element, to be bonded via an Ag calcination layer formed on a circuit layer, and the circuit layer can be reduced, and to provide a manufacturing method therefor, and a power module.SOLUTION: An elongated groove 35 is formed to connect an Ag layer 32 and an exposed part of a circuit layer spreading around the Ag layer 32. The groove 35 is an elongated recess extending from the surface of the Ag layer 32 to penetrate a glass layer 31 and an aluminum oxide coating and reaching the surface 12a of the circuit layer 12. An extension 36 of a part of the Ag layer 32 is formed in the groove 35, along the inner surface 35a thereof. At the part where the groove 35 is formed, the Ag layer 32 and circuit layer 12 are directly connected electrically by Ag of low electric resistance.
申请公布号 JP2015144264(A) 申请公布日期 2015.08.06
申请号 JP20140259202 申请日期 2014.12.22
申请人 MITSUBISHI MATERIALS CORP 发明人 NISHIMOTO SHUJI;NAGATOMO YOSHIYUKI
分类号 H01L23/36;H01L23/12;H01L23/40 主分类号 H01L23/36
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