发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes: forming a semiconductor wafer including a plurality of semiconductor devices sandwiching a dicing region and an inline inspection monitor arranged in the dicing region; after forming the semiconductor wafer, conducting an inline inspection of the semiconductor device by using the inline inspection monitor; and after the inline inspection, dicing the semiconductor wafer along the dicing region to separate the semiconductor devices individually. The step of forming the semiconductor wafer includes: simultaneously forming a first diffusion layer of the semiconductor device and a second diffusion layer of the inline inspection monitor; forming a metal layer on the first and second diffusion layer; and at least partly removing the metal layer on the second diffusion layer. When the semiconductor wafer is diced, a portion from which the metal layer has been removed is cut by a dicing blade on the second diffusion layer. |
申请公布号 |
US2015221564(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201414486221 |
申请日期 |
2014.09.15 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YOSHIDA Takuya;TAKANO Kazutoyo |
分类号 |
H01L21/66;H01L21/78 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device comprising:
forming a semiconductor wafer including a plurality of semiconductor devices sandwiching a dicing region and an inline inspection monitor arranged in the dicing region; after forming the semiconductor wafer, conducting an inline inspection of the semiconductor device by using the inline inspection monitor; and after the inline inspection, dicing the semiconductor wafer along the dicing region to separate the semiconductor devices individually, wherein the step of forming the semiconductor wafer includes:
simultaneously forming a first diffusion layer of the semiconductor device and a second diffusion layer of the inline inspection monitor;forming a metal layer on the first and second diffusion layer; andat least partly removing the metal layer on the second diffusion layer,when the semiconductor wafer is diced, a portion from which the metal layer has been removed is cut by a dicing blade on the second diffusion layer. |
地址 |
Tokyo JP |