发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device includes: forming a semiconductor wafer including a plurality of semiconductor devices sandwiching a dicing region and an inline inspection monitor arranged in the dicing region; after forming the semiconductor wafer, conducting an inline inspection of the semiconductor device by using the inline inspection monitor; and after the inline inspection, dicing the semiconductor wafer along the dicing region to separate the semiconductor devices individually. The step of forming the semiconductor wafer includes: simultaneously forming a first diffusion layer of the semiconductor device and a second diffusion layer of the inline inspection monitor; forming a metal layer on the first and second diffusion layer; and at least partly removing the metal layer on the second diffusion layer. When the semiconductor wafer is diced, a portion from which the metal layer has been removed is cut by a dicing blade on the second diffusion layer.
申请公布号 US2015221564(A1) 申请公布日期 2015.08.06
申请号 US201414486221 申请日期 2014.09.15
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 YOSHIDA Takuya;TAKANO Kazutoyo
分类号 H01L21/66;H01L21/78 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor wafer including a plurality of semiconductor devices sandwiching a dicing region and an inline inspection monitor arranged in the dicing region; after forming the semiconductor wafer, conducting an inline inspection of the semiconductor device by using the inline inspection monitor; and after the inline inspection, dicing the semiconductor wafer along the dicing region to separate the semiconductor devices individually, wherein the step of forming the semiconductor wafer includes: simultaneously forming a first diffusion layer of the semiconductor device and a second diffusion layer of the inline inspection monitor;forming a metal layer on the first and second diffusion layer; andat least partly removing the metal layer on the second diffusion layer,when the semiconductor wafer is diced, a portion from which the metal layer has been removed is cut by a dicing blade on the second diffusion layer.
地址 Tokyo JP