Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

This Cu-Ga alloy sputtering target is a fired body having a composition that contains 29.5-43.0% by atom of Ga with the balance made up of Cu and unavoidable impurities. A Cu-Ga alloy crystal grain in the fired body has a structure wherein γ-phase particles are dispersed in a γ1-phase crystal grain. A method for producing the above-described sputtering target comprises: a step wherein a molded body that is formed of a mixed powder of a pure Cu powder and a Cu-Ga alloy powder is fired at atmospheric pressure by being heated in a reducing atmosphere; and a step wherein the thus-obtained fired body is cooled at a cooling rate of 0.1-1.0°C/min in a temperature range of 450-650°C.