发明名称 ELECTRIC POWER SEMICONDUCTOR DEVICE
摘要 An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.
申请公布号 US2015223316(A1) 申请公布日期 2015.08.06
申请号 US201314417370 申请日期 2013.08.09
申请人 Mitsubishi Electric Corporation 发明人 Fujino Junji;Yoneda Yutaka;Onishi Yoshitaka;Sugawara Masafumi
分类号 H05K1/02 主分类号 H05K1/02
代理机构 代理人
主权项
地址 Chiyoda-ku, Tokyo JP