| 主权项 |
1. A semiconductor device, comprising;
a plurality of ferroelectric capacitors, each of the ferroelectric capacitors including a bottom electrode, a capacitor insulating film, and a top electrode; a plurality of switching elements, each of the switching elements being connected to one of the ferroelectric capacitors, respectively; a plurality of word lines, each of the word lines switching on and off two or more of the switching elements; a plurality of bit lines, each of the bit lines being connected to two or more of the switching elements; and a plate line that is connected to ferroelectric capacitors selected from the plurality of ferroelectric capacitors and covers the selected ferroelectric capacitors and regions between the selected ferroelectric capacitors from above the top electrodes. |
