MULTI-LAYER DEVICES UTILIZING LAYER TRANSFER

摘要

An apparatus is disclosed that includes a first plurality of devices made of a group III-V semiconductor material and a second plurality of devices made of a semiconductor material different than the material of the first plurality of devices that are bonded to the first plurality of devices. The apparatus also includes a dielectric layer surrounding the first plurality of devices and the second plurality of devices to mechanically bond the first plurality of devices to the second plurality of devices.

主权项

1. A method comprising:
forming a release layer over a donor substrate; forming a plurality of devices made of a first semiconductor material over the release layer; applying a first dielectric layer over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer; attaching the plurality of devices to a receiving structure made of a second semiconductor material, the receiving structure having a receiving substrate attached to a surface of the receiving structure opposite the plurality of devices; and etching the release layer to release the donor substrate from the plurality of devices.