发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Characteristics of a semiconductor device are improved. A semiconductor device of the present invention includes: (a) a MISFET arranged in an active region formed of a semiconductor region surrounded by an element isolation region; and (b) an insulating layer arranged below the active region. Further, the semiconductor device includes: (c) a p-type semiconductor region arranged below the active region so as to interpose the insulating layer; and (d) an n-type semiconductor region whose conductivity type is opposite to the p-type, arranged below the p-type semiconductor region. And, the p-type semiconductor region includes a connection region extending from below the insulating layer, and the p-type semiconductor region and a gate electrode of the MISFET are connected to each other by a shared plug which is an integrally-formed conductive film extending from above the gate electrode to above the connection region. |
申请公布号 |
US2015221560(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201514686828 |
申请日期 |
2015.04.15 |
申请人 |
Renesas Electronics Corporation |
发明人 |
HORITA Katsuyuki;IWAMATSU Toshiaki;MAKIYAMA Hideki;YAMAMOTO Yoshiki |
分类号 |
H01L21/84;H01L21/768;H01L21/28;H01L21/283;H01L29/66;H01L21/311 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |