INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

摘要

An integrated circuit structure is provided including a substrate, a low voltage device and a high voltage device. The low voltage device has a first beeline distance from a first epitaxial structure to an adjacent gate stack; and the high voltage structure has a second beeline distance from a second epitaxial structure to an adjacent gate stack. The second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device, so that the leakage current in the high voltage device may be decreased under high voltage operation. Further, a method for manufacturing the integrated circuit structure also provides herein.

主权项

1. An integrated circuit structure, comprising:
a substrate having a first area and a second area; a low voltage device disposed on the first area of the substrate, comprising:
a first gate stack disposed on the first area of the substrate;a second gate stack disposed on the first area of the substrate; anda first epitaxial structure disposed in the first area of the substrate and between the first gate stack and the second gate stack, and having a first beeline distance from the first epitaxial structure to the first gate stack or the second gate stack; and a high voltage device disposed on the second area of the substrate, comprising:
a third gate stack disposed on the second area of the substrate;a fourth gate stack disposed on the second area of the substrate; anda second epitaxial structure disposed in the second area of the substrate and between the third gate stack and the fourth gate stack, and having a second beeline distance from the second epitaxial structure to the third gate stack or the fourth gate stack, wherein the second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device.