Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films

摘要

A method of forming a photonic device that comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The method may further include forming a top diode material and an active diode region between the top and bottom diode materials.

主权项

1. A method comprising:
epitaxially growing a first crystalline semiconductor material on a first substrate, the substrate comprising a second crystalline semiconductor material, the first crystalline semiconductor material being lattice mismatched to the second crystalline semiconductor material, a portion of the first crystalline semiconductor material distal from the first substrate being substantially free of threading dislocations; bonding the portion of the first crystalline semiconductor material to a second substrate; and after the bonding, removing the first substrate.