发明名称 Substrate Including a Diamond Layer and a Composite Layer of Diamond and Silicon Carbide, and, Optionally, Silicon
摘要 A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≧5%; ≧20%; ≧40%; or ≧60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.
申请公布号 US2015218694(A1) 申请公布日期 2015.08.06
申请号 US201514600592 申请日期 2015.01.20
申请人 II-VI Incorporated 发明人 Xu Wen-Qing;Eissler Elgin E.;Liu Chao;Tanner Charles D.;Kraisinger Charles J.;Aghajanian Michael
分类号 C23C16/27;C30B25/02;C23C16/44 主分类号 C23C16/27
代理机构 代理人
主权项 1. A multilayer substrate comprising: a composite layer comprised of diamond particles and silicon carbide particles; and a chemical vapor deposition (CVD) grown diamond layer on the composite layer, wherein diamond of the diamond layer is CVD grown on crystal surfaces of the diamond particles and/or the silicon carbide particles comprising the composite layer.
地址 Saxonburg PA US