发明名称 MICRODOSIMETER BASED ON 3D SEMICONDUCTOR STRUCTURES, METHOD FOR PRODUCING SAID MICRODOSIMETER, AND USE OF SAID MICRODOSIMETER
摘要 The invention relates to a microdosimeter formed by cells forming an array, where each cell contains a radiation-sensitive volume formed over semiconductors by means of three-dimensional processes defined by the components of a p-n junction so as to ensure the accurate delimitation, to a very small number of μm, of a sensitive volume similar to the mean volume of the cell nucleus, of a diameter approximately equal to, or less than, 10 μm, where the substrate where the cell is produced is a semiconductor wafer and the cell has a diameter of between 5 and 150 μm and a depth of between 1 and 300 μm. The invention also relates to different methods for producing different configurations that said microdosimeters may present, and to the use thereof for detecting radiation in different fields including medical and aerospace applications.
申请公布号 WO2015114193(A1) 申请公布日期 2015.08.06
申请号 WO2015ES70056 申请日期 2015.01.28
申请人 CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS (CSIC);UNIVERSIDADE DE SANTIAGO DE COMPOSTELA 发明人 GUARDIOLA SALMERÓN, CONSUELO;PELLEGRINI, GIULIO;LOZANO FANTOBA, MANUEL;FLETA CORRAL, MARÍA CELESTE;QUIRION, DAVID;GÓMEZ RODRIGUEZ, FAUSTINO
分类号 B81B7/04;B81C1/00;G01T1/02;H01L31/115 主分类号 B81B7/04
代理机构 代理人
主权项
地址