发明名称 METHOD FOR ENHANCING BEAM UTILIZATION IN A SCANNED BEAM ION IMPLANTER
摘要 <p>A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups.</p>
申请公布号 WO2015116784(A1) 申请公布日期 2015.08.06
申请号 WO2015US13456 申请日期 2015.01.29
申请人 AXCELIS TECHNOLOGIES, INC. 发明人 SATOH, SHU
分类号 H01J37/08 主分类号 H01J37/08
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