HIGH PERFORMANCE SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device by suppressing snapback phenomenon at the time of turning a reverse conducting IGBT on, and also suppressing deterioration due to snapback phenomenon, and to provide an operation method thereof.SOLUTION: A reverse conducting IGBT is formed of a wide gap semiconductor, and the distance Wp between collector short circuit parts 3 is set in a range where distance Wp(Si) between reverse conducting IGBTs of the same breakdown voltage and same configuration formed of a Si semiconductor is the upper limit, and the AXWp(Si) is the lower limit. A coefficient A is a value obtained by dividing the product of the built-in voltage Vbi(WB) of the pn junction of a wide gap semiconductor and the characteristic on resistance RonS(WB) of a wide gap semiconductor MOSFET, by the product of the built-in voltage Vbi(Si) of the pn junction of a Si semiconductor device and the characteristic on resistance RonS(Si) of a Si-MOSFET.