| 发明名称 |
THERMOELECTRIC CONVERSION DEVICE |
| 摘要 |
In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si.;This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost. |
| 申请公布号 |
US2015221845(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201214421202 |
申请日期 |
2012.08.31 |
| 申请人 |
Takubo Chisaki;Takano Hideaki;Asai Kengo;Naito Takashi;Fujieda Tadashi;Sawai Yuichi;Sakuma Noriyuki |
发明人 |
Takubo Chisaki;Takano Hideaki;Asai Kengo;Naito Takashi;Fujieda Tadashi;Sawai Yuichi;Sakuma Noriyuki |
| 分类号 |
H01L35/04;H01L35/18;H01L35/20;H01L35/16 |
主分类号 |
H01L35/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thermoelectric conversion device comprising
a support substrate, an electrode formed on the support substrate, and a thermoelectric conversion part formed on the electrode and containing semiconductor glass, wherein the semiconductor glass is non-lead glass containing vanadium, and the electrode contains any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si. |
| 地址 |
Tokyo JP |
