SIMPLIFIED DEVICES UTILIZING NOVEL PN-SEMICONDUCTUR STRUCTURES

摘要

An electronic or electro-optic device includes a p-type semi-conductor layer, an n-type semiconductor layer having a region of contact with the p-type semiconductor layer to provide a p-n junction, a first electrical lead in electrical connection with the p-type semiconductor layer, and a second electrical lead in electrical connection with the n-type semiconductor layer. At least one of the p-type and n-type semiconductor layers includes a doped topological-insulator material having an electrically conducting surface, and one of the first and second electrical leads is electrically connected to the electrically conducting surface of the topological-insulator material.

主权项

1. An electronic or electro-optic device, comprising:
a p-type semiconductor layer; an n-type semiconductor layer having a region of contact with said p-type semiconductor layer to provide a p-n junction; a first electrical lead in electrical connection with said p-type semiconductor layer; and a second electrical lead in electrical connection with said n-type semiconductor layer, wherein at least one of said p-type and n-type semiconductor layers comprises a doped topological-insulator material having an electrically conducting surface, and wherein one of said first and second electrical leads is electrically connected to said electrically conducting surface of said topological-insulator material.