SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film.

主权项

1. A semiconductor device comprising:
a transistor, the transistor comprising:
a first oxide insulating film;a second oxide insulating film surrounding the first oxide insulating film;an oxide semiconductor film over the first oxide insulating film and the second oxide insulating film;a gate insulating film over the oxide semiconductor film;a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween; anda pair of electrodes over the oxide semiconductor film, wherein an end portion of the oxide semiconductor film which crosses a channel width direction of the transistor is located over the second oxide insulating film.