| 发明名称 |
MEMORY DEVICE AND MEMORY CELL ARRAY |
| 摘要 |
A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode. |
| 申请公布号 |
US2015221701(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201414556770 |
申请日期 |
2014.12.01 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yang Min-kyu;Kim Young-bae;Hwang Hyun-sang;Woo Ji-yong |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory device comprising:
a first electrode formed of a conductive material; a first variable resistance layer contacting the first electrode; a second electrode contacting the first variable resistance layer and formed of the conductive material; a second variable resistance layer contacting the second electrode and formed of the same material as that of the first variable resistance layer; and a third electrode contacting the second variable resistance layer and formed of the same material as that of the first electrode. |
| 地址 |
Suwon-si KR |
