发明名称 MANUFACTURING METHOD OF DISPLAY DEVICE
摘要 Since a film, which is the upper layer of an interlayer insulating film and has a fast etching rate, does not have dense film quality, moisture is entered from the end portion of a substrate, and it is likely that display unevenness and the like occur. A manufacturing method of a display device includes the steps of: forming a first contact hole on the first interlayer film; forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a lower layer film and an upper layer film having an etching rate faster than an etching rate of the lower layer film; forming a second contact hole on the second interlayer film; and removing at least a part of the upper layer film.
申请公布号 US2015221684(A1) 申请公布日期 2015.08.06
申请号 US201514606199 申请日期 2015.01.27
申请人 Japan Display Inc. 发明人 KANDA Noriyoshi
分类号 H01L27/12;G02F1/1339;G02F1/1337;H01L29/66;G02F1/1362;H01L21/768;H01L21/311;H01L21/02;G02F1/1368;G02F1/1333 主分类号 H01L27/12
代理机构 代理人
主权项 1. A manufacturing method of a display device comprising the steps of: (a) preparing a substrate having an electrode of a thin film transistor; (b) forming a first interlayer film on the electrode; (c) forming a first contact hole on the first interlayer film; (d) forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a first film and a second film provided above the first film, the second film having an etching rate faster than an etching rate of the first film; (e) forming a second contact hole on the second interlayer film in the first contact hole; (f) removing at least a part of the second film, and (g) forming a transparent conductive film on the second interlayer film and in the second contact hole.
地址 Minato-ku JP