发明名称 |
MANUFACTURING METHOD OF DISPLAY DEVICE |
摘要 |
Since a film, which is the upper layer of an interlayer insulating film and has a fast etching rate, does not have dense film quality, moisture is entered from the end portion of a substrate, and it is likely that display unevenness and the like occur. A manufacturing method of a display device includes the steps of: forming a first contact hole on the first interlayer film; forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a lower layer film and an upper layer film having an etching rate faster than an etching rate of the lower layer film; forming a second contact hole on the second interlayer film; and removing at least a part of the upper layer film. |
申请公布号 |
US2015221684(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201514606199 |
申请日期 |
2015.01.27 |
申请人 |
Japan Display Inc. |
发明人 |
KANDA Noriyoshi |
分类号 |
H01L27/12;G02F1/1339;G02F1/1337;H01L29/66;G02F1/1362;H01L21/768;H01L21/311;H01L21/02;G02F1/1368;G02F1/1333 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a display device comprising the steps of:
(a) preparing a substrate having an electrode of a thin film transistor; (b) forming a first interlayer film on the electrode; (c) forming a first contact hole on the first interlayer film; (d) forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a first film and a second film provided above the first film, the second film having an etching rate faster than an etching rate of the first film; (e) forming a second contact hole on the second interlayer film in the first contact hole; (f) removing at least a part of the second film, and (g) forming a transparent conductive film on the second interlayer film and in the second contact hole. |
地址 |
Minato-ku JP |