Semiconductor Device, Manufacturing Method Thereof, Module, and Electronic Device

摘要

A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.

主权项

1. A semiconductor device comprising:
a transistor comprising:
a first conductive film;a first insulating film over the first conductive film;a second insulating film over the first insulating film;an oxide semiconductor film over the second insulating film;a pair of electrodes in contact with the oxide semiconductor film;a third insulating film over the oxide semiconductor film; anda second conductive film overlapping with the oxide semiconductor film with the third insulating film therebetween,wherein the first insulating film comprises a film containing hydrogen, andwherein the second insulating film comprises an oxide insulating film, and a capacitor comprising:
a third conductive film;the first insulating film over the third conductive film;a fourth insulating film over the first insulating film; anda fourth conductive film over the fourth insulating film,wherein the first conductive film and the third conductive film are provided over the same surface.