发明名称 METHOD OF MANUFACTURING DISPLAY DEVICE
摘要 A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.
申请公布号 US2015221675(A1) 申请公布日期 2015.08.06
申请号 US201514684824 申请日期 2015.04.13
申请人 Panasonic Liquid Crystal Display Co., Ltd. 发明人 YASUKAWA Hironori;KAWACHI Genshiro;KATO Tomoya;KITA Kazuo
分类号 H01L27/12;H01L29/66 主分类号 H01L27/12
代理机构 代理人
主权项 1. A method of manufacturing a display device, comprising: forming a gate electrode on a substrate; forming a gate insulating film on the substrate having the gate electrode formed thereon; forming an oxide semiconductor on the substrate having the gate insulating film formed thereon; forming a source electrode and a drain electrode on the substrate having the oxide semiconductor formed thereon; forming a passivation film on the substrate having the source electrode and the drain electrode formed thereon; forming a common electrode on the substrate having the passivation film formed thereon; forming an interlayer insulating film on the substrate having the common electrode formed thereon; forming a pixel electrode on the substrate having the interlayer insulating film formed thereon; forming an alignment film on the substrate having the pixel electrode formed thereon; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays, wherein the radiating UV-rays is performed after the forming an oxide semiconductor, and wherein the heat-treating is performed after the forming a passivation film.
地址 Himeji-shi JP