发明名称 |
METHOD OF MANUFACTURING DISPLAY DEVICE |
摘要 |
A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film. |
申请公布号 |
US2015221675(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201514684824 |
申请日期 |
2015.04.13 |
申请人 |
Panasonic Liquid Crystal Display Co., Ltd. |
发明人 |
YASUKAWA Hironori;KAWACHI Genshiro;KATO Tomoya;KITA Kazuo |
分类号 |
H01L27/12;H01L29/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a display device, comprising:
forming a gate electrode on a substrate; forming a gate insulating film on the substrate having the gate electrode formed thereon; forming an oxide semiconductor on the substrate having the gate insulating film formed thereon; forming a source electrode and a drain electrode on the substrate having the oxide semiconductor formed thereon; forming a passivation film on the substrate having the source electrode and the drain electrode formed thereon; forming a common electrode on the substrate having the passivation film formed thereon; forming an interlayer insulating film on the substrate having the common electrode formed thereon; forming a pixel electrode on the substrate having the interlayer insulating film formed thereon; forming an alignment film on the substrate having the pixel electrode formed thereon; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays, wherein the radiating UV-rays is performed after the forming an oxide semiconductor, and wherein the heat-treating is performed after the forming a passivation film. |
地址 |
Himeji-shi JP |