发明名称 |
ALUMINUM-GALLIUM-INDIUM-PHOSPHORUS-BASED LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE LAYER OF UNEVEN TYPE AND METHOD FOR MANUFACUTURING SAME |
摘要 |
The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process. |
申请公布号 |
WO2015115685(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
WO2014KR00848 |
申请日期 |
2014.01.29 |
申请人 |
AUK CORP. |
发明人 |
LEE, HYUNG JOO;KIM, YOUNG JIN;JANG, IN KYU |
分类号 |
H01L33/26;H01L33/10;H01L33/22 |
主分类号 |
H01L33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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