发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR CERAMIC COMPOSITION, SEMICONDUCTOR CERAMIC COMPOSITION, PTC ELEMENT, AND HEATING ELEMENT MODULE
摘要 <p>Provided is a novel manufacturing method which can perform adjustment so that the Curie temperature of a semiconductor ceramic composition becomes higher, and the room temperature resistivity ρ becomes lower. The method is a manufacturing method for a semiconductor ceramic composition in which a (BiA)TiO3 (A is at least one from among Na, Li, and K) calcined powder and a (BaR)[TiM]O3 (R is at least one from among the rare-earth elements including Y, M is at least one from among Nb, Ta, and Sb, and either R or M is required) calcined powder are prepared, the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder are mixed, and subsequently, molding and sintering are performed, said manufacturing method for a semiconductor ceramic composition characterized in that prior to the mixing of the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder, a/b ≥ 2.0 is satisfied, where a is the BET value of the (BiA)TiO3 calcined powder and b is the BET value of the (BaR)[TiM]O3 calcined powder.</p>
申请公布号 WO2015115421(A1) 申请公布日期 2015.08.06
申请号 WO2015JP52182 申请日期 2015.01.27
申请人 HITACHI METALS, LTD. 发明人 TERAKADO YUTARO;SHIMADA TAKESHI
分类号 C04B35/468;H01C7/02 主分类号 C04B35/468
代理机构 代理人
主权项
地址
您可能感兴趣的专利