| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable display device by realizing high mobility in a device using an oxide semiconductor.SOLUTION: In a method of manufacturing a semiconductor device, an oxide semiconductor layer having a crystal region in which c-axis is oriented in a direction substantially perpendicular to a surface is formed, and an oxide insulating layer is formed on the oxide semiconductor layer in contact therewith. Oxygen is supplied to the oxide semiconductor layer by performing third heat treatment. A nitride insulating layer containing hydrogen is formed on the oxide insulating layer, and fourth heat treatment is performed, thereby hydrogen is supplied to at least an interface between the oxide semiconductor layer and the oxide insulating layer. |
