发明名称 METHOD FOR MANUFACTURING PHOTOMASK, PHOTOMASK, AND PATTERN TRANSFER METHOD
摘要 PROBLEM TO BE SOLVED: To form a phase shift pattern as designed and to reduce a probability of generating defects due to pattern drop.SOLUTION: A light-shielding film (13) on a transparent substrate (11) is patterned to form a non-phase-shift light-transmitting part (15) and a light-shielding part (14), as well as to form, within a region of a phase-shift light-transmitting part (17), a temporary pattern (23a) having a light-shielding film (13) smaller than the above region. A second resist pattern (25) is formed on the transparent substrate (11), the second resist pattern having such a part (25a) in the region of the phase-shift light-transmitting part (17) that has a smaller resist height than a resist height on the light-shielding film (13) remaining in the region of the light-shielding part (14). The temporary pattern (23a) is removed by etching by using the second resist pattern (25) as a mask so as to partially expose the surface of the transparent substrate (11); and the exposed part of the substrate is subjected to wet etching to form the phase-shift light-transmitting part (17).
申请公布号 JP2015143816(A) 申请公布日期 2015.08.06
申请号 JP20140222659 申请日期 2014.10.31
申请人 HOYA CORP 发明人 SUDA HIDEKI
分类号 G03F1/30;G03F7/20;H01L21/027 主分类号 G03F1/30
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