THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor and a manufacturing method of the same, which can inhibit a characteristic change of a metal oxide for forming a semiconductor layer, which is caused by light irradiation from a liquid crystal display, an organic EL display or the like by providing a channel cover for blocking irradiation of light of a visible light spectrum on a channel. ! SOLUTION: A thin film transistor 10 comprises: a gate electrode 30; an insulator layer 40 provided to cover a top face of the gate electrode 30; a semiconductor layer 50 provided on a top face of the insulator layer 40; a channel cover layer 90 provided on a top face of the semiconductor layer 50; and a source electrode 60 and a drain electrode 70 which are provided in contact with the semiconductor layer 50. The gate electrode 30 is provided to correspond to a channel in the semiconductor layer 50 between the source electrode 60 and the drain electrode 70. The channel cover layer 90 blocks irradiation of light of