| 主权项 |
1. A semiconductor memory device, comprising a memory cell array and a control circuit,
the memory cell array including: a plurality of first conductive layers that are stacked in a first direction perpendicular to a substrate and extend in a second direction parallel to the substrate; a memory layer provided on a side surface of the plurality of the first conductive layers; and a second conductive layer that extends in the first direction and includes a first side surface that contacts the side surface of the plurality of the first conductive layers via the memory layer, a width in the second direction of the first side surface of the second conductive layer at a first position in the first direction being smaller than a width in the second direction of the first side surface of the second conductive layer at a second position lower than the first position, a thickness in the first direction of the first conductive layer disposed at the first position being larger than a thickness in the first direction of the first conductive layer disposed at the second position, the control circuit being configured to apply a first voltage to a selected first conductive layer of the first conductive layers and provide a second voltage to the second conductive layer, and the control circuit being configured capable of, when the control circuit applies the first voltage to the selected first conductive layer, changing a value of the first voltage based on a position in the first direction of the selected first conductive layer. |
