发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要 <p>The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a first fin region and a second fin region; a separating insulation film in the shape of an island, separating the first fin region from the second fin region; a first gate crossing the first fin region and a second gate crossing the second fin region; and a third gate covering side wall parts and the upper part of the separating insulation film and crossing the separating insulation film.</p>
申请公布号 KR20150090796(A) 申请公布日期 2015.08.06
申请号 KR20140031713 申请日期 2014.03.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, HEON JONG;KIM, SUNG MIN;KIM, BYUNG SEO;PAAK SUNHOM STEVE;BAE, HYUN JUN
分类号 H01L27/088;H01L21/8232;H01L29/78 主分类号 H01L27/088
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