发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
<p>The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a first fin region and a second fin region; a separating insulation film in the shape of an island, separating the first fin region from the second fin region; a first gate crossing the first fin region and a second gate crossing the second fin region; and a third gate covering side wall parts and the upper part of the separating insulation film and crossing the separating insulation film.</p> |
申请公布号 |
KR20150090796(A) |
申请公布日期 |
2015.08.06 |
申请号 |
KR20140031713 |
申请日期 |
2014.03.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, HEON JONG;KIM, SUNG MIN;KIM, BYUNG SEO;PAAK SUNHOM STEVE;BAE, HYUN JUN |
分类号 |
H01L27/088;H01L21/8232;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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