| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that the physical properties of a silicon semiconductor have often been made clear, but the physical properties of an oxide semiconductor are often unsure, especially the impact of impurities on an oxide semiconductor has not yet clarified, and to disclose a configuration for preventing or eliminating impurities affecting the electrical characteristics of a semiconductor device using an oxide semiconductor layer.SOLUTION: A semiconductor device includes a gate electrode, an oxide semiconductor layer having a channel formation region, and a gate insulation layer sandwiched between the gate electrode and oxide semiconductor layer. Nitrogen concentration in the channel formation region is 1×10atoms/cmor less. |
