发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of retaining storage content even when power is not supplied, having no limitation in the number of writings.SOLUTION: The semiconductor device includes a capacitance element 164 and a second transistor 162 provided on a first transistor 160. A gate electrode 110 of the first transistor 160 and a source electrode 142a of the second transistor 162 that is in contact with the gate electrode are formed by using materials with which an etching selection ratio is obtained. By reducing a layout margin, a degree of integration of the semiconductor device is improved. |
申请公布号 |
JP2015144277(A) |
申请公布日期 |
2015.08.06 |
申请号 |
JP20150011082 |
申请日期 |
2015.01.23 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ISOBE ATSUO;IEDA YOSHINORI;KATO KIYOSHI;YAKUBO HIROTO;HATA YUUKI |
分类号 |
H01L21/8242;C23C14/34;G11C11/405;H01L21/02;H01L21/265;H01L21/477;H01L21/768;H01L21/8234;H01L27/088;H01L27/10;H01L27/108;H01L27/12;H01L29/786 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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