发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of retaining storage content even when power is not supplied, having no limitation in the number of writings.SOLUTION: The semiconductor device includes a capacitance element 164 and a second transistor 162 provided on a first transistor 160. A gate electrode 110 of the first transistor 160 and a source electrode 142a of the second transistor 162 that is in contact with the gate electrode are formed by using materials with which an etching selection ratio is obtained. By reducing a layout margin, a degree of integration of the semiconductor device is improved.
申请公布号 JP2015144277(A) 申请公布日期 2015.08.06
申请号 JP20150011082 申请日期 2015.01.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ISOBE ATSUO;IEDA YOSHINORI;KATO KIYOSHI;YAKUBO HIROTO;HATA YUUKI
分类号 H01L21/8242;C23C14/34;G11C11/405;H01L21/02;H01L21/265;H01L21/477;H01L21/768;H01L21/8234;H01L27/088;H01L27/10;H01L27/108;H01L27/12;H01L29/786 主分类号 H01L21/8242
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