发明名称 |
PLASMA ATOMIC LAYER DEPOSITION WITH PULSED PLASMA EXPOSURE |
摘要 |
PROBLEM TO BE SOLVED: To provide techniques of forming a uniform film on an uneven face of a semiconductor substrate having patterns.SOLUTION: While operation of plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasma, pulsed plasma is utilized to achieve a film with high quality sidewalls. The increased sidewall quality corresponds to a film that is overall more uniform in quality. |
申请公布号 |
JP2015144268(A) |
申请公布日期 |
2015.08.06 |
申请号 |
JP20140262248 |
申请日期 |
2014.12.25 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
JAMES S SIMS;JON HENRI;KATHRYN M KELCHNER;SATHISH BABU S V JANJAM;SHANE TANG |
分类号 |
H01L21/31;C23C16/42;C23C16/455;C23C16/515;H01L21/316;H01L21/318;H05H1/46 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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