发明名称 PLASMA ATOMIC LAYER DEPOSITION WITH PULSED PLASMA EXPOSURE
摘要 PROBLEM TO BE SOLVED: To provide techniques of forming a uniform film on an uneven face of a semiconductor substrate having patterns.SOLUTION: While operation of plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasma, pulsed plasma is utilized to achieve a film with high quality sidewalls. The increased sidewall quality corresponds to a film that is overall more uniform in quality.
申请公布号 JP2015144268(A) 申请公布日期 2015.08.06
申请号 JP20140262248 申请日期 2014.12.25
申请人 LAM RESEARCH CORPORATION 发明人 JAMES S SIMS;JON HENRI;KATHRYN M KELCHNER;SATHISH BABU S V JANJAM;SHANE TANG
分类号 H01L21/31;C23C16/42;C23C16/455;C23C16/515;H01L21/316;H01L21/318;H05H1/46 主分类号 H01L21/31
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