| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-reliability semiconductor device having stable electrical characteristics and having a thin-film transistor formed by using an oxide semiconductor.SOLUTION: A semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode or a drain electrode which is in contact with the oxide semiconductor film. The source electrode or the drain electrode includes a mixture, a metal compound, or alloy containing one or more of metal with low electronegativity, such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum, and concentration of hydrogen in the source electrode or the drain electrode is 1.2 times, preferably, 5 times or more as high as concentration of hydrogen in the oxide semiconductor film. |
