Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material

摘要

A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

主权项

1. A device with complementary non-inverted N-channel and inverted P-channel field effect transistors using gallium polar III-Nitride material comprising:
a first gallium-polar III-Nitride material layer grown epitaxially on a substrate; a III-Nitride barrier material layer; a two-dimensional electron gas in the first gallium-polar III-Nitride material layer at the interface of the III-Nitride barrier material layer; a second III-Nitride material layer; a two-dimensional hole gas in the second III-Nitride material layer at the interface of the III-Nitride barrier material layer; a non-inverted N-channel III-Nitride field effect transistor in the first gallium-polar III-Nitride material layer; wherein the non-inverted N-channel III-Nitride field effect transistor has a two-dimensional electron gas; and an inverted P-Channel III-Nitride field effect transistor in the second III-Nitride material layer; wherein the inverted P-Channel III-Nitride field effect transistor has a two-dimensional hole gas.