An apparatus includes a first resistive storage element and a second resistive storage element. The first and second resistive storage elements are coupled to column lines to of a crosspoint array to form a memory cell; and a ratio of resistances of the first and second resistive storage elements indicates a stored value for the memory cell.
申请公布号
WO2015116144(A1)
申请公布日期
2015.08.06
申请号
WO2014US14051
申请日期
2014.01.31
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
BUCHANAN, BRENT E.;FOLTIN, MARTIN;LUCAS, JEFFREY A.;PARKER, CLINTON H.