| 摘要 |
<p>Provided is a light emitting element capable of suppressing generation of voids in a semiconductor without deteriorating crystal qualities of the semiconductor. This light emitting element is provided with: a sapphire substrate having recesses and projections that are formed to be scattered in a surface at a pitch of 1 μm or less; and a semiconductor laminated section formed on the surface of the sapphire substrate, said semiconductor laminated section including a light emitting layer, and being formed of a III nitride semiconductor. At the interface between the sapphire substrate and the semiconductor laminated section, there are diffraction operations of light emitted from the light emitting layer. The density of voids having a size smaller than the pitch of the recesses or projections, said voids being in the semiconductor laminated section close to the sapphires substrate, is set at 1.0×102/cm2-2.3×107/cm2.</p> |
