发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example. |
申请公布号 |
US2015221754(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201514688199 |
申请日期 |
2015.04.16 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
HONDO Suguru;SHIMOMURA Akihisa;KOYAMA Masaki;KURATA Motomu;HANAOKA Kazuya;NAGAMATSU Sho;NEI Kosei;HASEGAWA Toru |
分类号 |
H01L29/66;H01L21/46 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atugi-shi JP |