NANOWIRE TRANSISTOR WITH UNDERLAYER ETCH STOPS

摘要

A nanowire device of the present description may be produced with the incorporation of at least one underlayer etch stop formed during the fabrication of at least one nanowire transistor in order to assist in protecting source structures and/or drain structures from damage that may result from fabrication processes. The underlayer etch stop may prevent damage to the source structures and/or drain the structures, when the material used in the fabrication of the source structures and/or the drain structures is susceptible to being etched by the processes used in the removal of the sacrificial materials, i.e. low selectively to the source structure and/or the drain structure materials, such that potential shorting between the transistor gate electrodes and contacts formed for the source structures and/or the drain structures may be prevented.

主权项

1. A method of forming a microelectronic structure, comprising:
forming a fin structure on a microelectronic substrate, wherein the fin structure comprises at least one sacrificial material layer alternating with at least one channel material layer; forming at least two spacers across the fin structure; forming a sacrificial gate electrode material between the at least two spacers; removing a portion fin structure external to the sacrificial gate electrode material and the spacers to form a fin structure first end and an opposing fin structure second end; forming underlayer etch stop structures to abut the fin structure first end and the fin structure second end; and forming a source structure and a drain structure to abut the underlayer etch stop structures on opposing ends of the fin structure.