FINFET WITH ISOLATED SOURCE AND DRAIN

摘要

A FinFET has shaped epitaxial structures for the source and drain that are electrically isolated from the substrate. Shaped epitaxial structures in the active region are separated from the substrate in the source and drain regions while those in the channel region remain. The gaps created by the separation in the source and drain are filled with electrically insulating material. Prior to filling the gaps, defects created by the separation may be reduced.

主权项

1. A method, comprising:
providing a semiconductor structure, the structure comprising: a semiconductor substrate; at least one raised semiconductor structure coupled to the substrate, and an active region having a source region, a drain region and a channel region therebetween, the active region comprising a layer of epitaxy over a top surface of the at least one raised structure, a dummy gate encompassing the channel region and a spacer on either side of the dummy gate; and electrically isolating the source region and the drain region from the at least one raised semiconductor structure while the channel region remains coupled thereto.