发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
摘要 A semiconductor device includes an insulating substrate, a wiring pattern formed on the insulating substrate, a semiconductor chip secured to the wiring pattern, a junction terminal formed of the same material as the wiring pattern and electrically connected to the semiconductor chip, one end of the junction terminal being secured to the insulating substrate, the other end of the junction terminal extending upward away from the insulating substrate, and a control circuit for transmitting a control signal for the semiconductor chip, the control circuit being electrically connected to the junction terminal.
申请公布号 US2015221525(A1) 申请公布日期 2015.08.06
申请号 US201514687619 申请日期 2015.04.15
申请人 Mitsubishi Electric Corporation 发明人 OTSUKI Takami;OBARA Taichi;GOTO Akira
分类号 H01L21/48;B22D19/00;B22D21/04 主分类号 H01L21/48
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising: a step of placing an insulating substrate in a mold having a wiring pattern-forming cavity for forming a wiring pattern on said insulating substrate and also having a junction terminal-forming cavity for forming a junction terminal extending upward from said insulating substrate; an aluminum pouring step of pouring aluminum into said wiring pattern-forming cavity and said junction terminal-forming cavity; and a step of cooling said aluminum.
地址 Chiyoda-ku JP