NONVOLATILE MEMORY DEVICE USING RESISTANCE MATERIAL

摘要

Provided is a nonvolatile memory device. The nonvolatile memory device may include a resistive memory cell, a reference current generator which provides a reference current, a reference signal generator which provides a reference signal indicating a reference time for data read based on the reference current, and a read circuit which receives the reference signal and reads data by comparing a ramp-up time of a cell current flowing through the resistive memory cell with the reference time.

主权项

1. A nonvolatile memory device comprising:
a resistive memory cell; a reference current generator configured to provide a reference current; a reference signal generator configured to provide a reference signal indicating a reference time for data read based on the reference current; and a read circuit configured to receive the reference signal and to read data by comparing a ramp-up time of a cell current flowing through the resistive memory cell with the reference time.