APPARATUS AND METHOD TREATING SUBSTRATE

摘要

The present invention provides an apparatus and a method for processing a substrate. The apparatus for processing a substrate comprises: a chamber having a processing space inside; a support unit to support a substrate in the processing space; a heat transfer gas supply unit to provide a heat transfer gas for the upper surface of the substrate support unit, and to provide a heat transfer gas for an area corresponding to a plurality of areas on the substrate respectively by independently controlling an amount of the heat transfer gas; a measuring unit to measure horizontality of the substrate placed on the substrate support unit; and a controller to receive a value measured by the measuring unit, and to control a supply amount of the heat transfer gas respectively based on the measured value. The horizontality of the substrate can be adjusted by independently controlling a supply flow rate of the heat transfer gas provided for a plurality of areas on the bottom of the substrate.