| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing agent which suppresses the occurrence of polishing defect on a surface to be polished including a film of silicon oxide, silicon nitride, or the like, and which enables CMP (Chemical Mechanical Polishing) to be performed at a high polishing speed, and to provide a polishing method.SOLUTION: The polishing agent in one embodiment contains cerium oxide particles and water. The cerium oxide particles has a value A (=(I/I')/XS)) of 0.08 or less, obtained from a ratio between an absorbance I at 3566 cmand an absorbance I' at 3695 cmin an IR spectrum (relative to 3900 cm), and from a crystallite diameter XS. The polishing agent in another embodiment contains cerium oxide particles and water. The cerium oxide particle has a deviation B(%) (=(1-a/a')×100) of -0.16% or more, obtained from a theoretical value of a lattice constant a' and a lattice constant a measured by powder X-ray diffraction and has an average secondary particle diameter of 90 nm or more and 500 nm or less.</p> |
