发明名称 Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor
摘要 Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
申请公布号 US2015221650(A1) 申请公布日期 2015.08.06
申请号 US201514688122 申请日期 2015.04.16
申请人 Zeno Semiconductor, Inc. 发明人 Widjaja Yuniarto;Or-Bach Zvi
分类号 H01L27/102;H01L27/108;H01L29/08;H01L29/739;G11C11/4067;G11C11/4074;G11C11/409;H01L29/10 主分类号 H01L27/102
代理机构 代理人
主权项
地址 Cupertino CA US