发明名称 |
Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor |
摘要 |
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell. |
申请公布号 |
US2015221650(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
US201514688122 |
申请日期 |
2015.04.16 |
申请人 |
Zeno Semiconductor, Inc. |
发明人 |
Widjaja Yuniarto;Or-Bach Zvi |
分类号 |
H01L27/102;H01L27/108;H01L29/08;H01L29/739;G11C11/4067;G11C11/4074;G11C11/409;H01L29/10 |
主分类号 |
H01L27/102 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Cupertino CA US |