发明名称 |
MEMORY CELL HAVING RESISTIVE AND CAPACITIVE STORAGE ELEMENTS |
摘要 |
A technique including using an array of memory cells for data storage. A given cell of the memory cells includes a capacitive storage element and a resistive storage element that is coupled in series with the capacitive storage element. The technique includes accessing the given memory cell to write a value to the given memory cell or read a value stored in the memory cell. The accessing includes applying a time varying voltage to the memory cell. |
申请公布号 |
WO2015116142(A2) |
申请公布日期 |
2015.08.06 |
申请号 |
WO2014US14046 |
申请日期 |
2014.01.31 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
BUCHANAN, BRENT E. |
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