摘要 |
A solid-state image capture device comprising: a plurality of pixels wherein photoelectric conversion parts which emit signal charges generated by photoelectric conversion of incident light are arranged in a matrix; a plurality of first charge accumulation circuits which retain the signal charges emitted by the photoelectric conversion parts and output the same as first pixel signals; a plurality of charge transfer circuits which transfer the signal charges emitted by the photoelectric conversion parts to the first charge accumulation circuits; and a plurality of second charge accumulation circuits which retain signal charges based on the signal charges emitted by the respective photoelectric conversion parts within the plurality of pixels, and output the same as second pixel signals for a number of pixels reduced to a predetermined number of pixels. The charge transfer circuits transfer the signal charges emitted by the corresponding photoelectric conversion parts in the same exposure period to the second charge accumulation circuits as well as the first charge accumulation circuits. |