SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To improve characteristics of a film formed on a substrate and to improve a manufacture throughput.SOLUTION: A substrate processing apparatus has: a plurality of processing chambers in which substrates are stored; a processing gas supply system which supplies a processing gas to the processing chambers in order; a reaction gas supply system which supplies an activated reaction gas to the processing chambers in order; a buffer tank which is provided for the processing gas supply system; and a control part which controls the processing gas supply system and reaction gas supply system to supply the processing gas and reaction gas alternately to the respective processing chambers so that a time for which the reaction gas is supplied to one of the processing chambers is equal to the total of a time for which the processing gas is supplied to one of the processing chambers and a time for which the processing gas is supplied to the buffer tank.