INDIUM GALLIUM ZINC OXIDE LAYERS FOR THIN FILM TRANSISTORS

摘要

Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In one embodiment, a method is provided for forming an IGZO active layer on a dielectric surface using a PECVD deposition process. In one embodiment, a method is provided for pretreating and passivating the dielectric surface for receiving the PECVD formed IGZO layer. In another embodiment, a method is provided for treating a PECVD formed IGZO layer after depositing said layer. In another embodiment, a method is provided for forming a multi-layer or complex layering structure of IGZO, within a PECVD processing chamber, for optimizing TFT electrical characteristics such as carrier density, contact resistance, and gate dielectric interfacial properties. In yet another embodiment, a method is provided for forming integrated layers for a TFT including IGZO within an in-situ environment of a cluster tool.

主权项

1. A method of forming a thin film transistor device, comprising:
heating a substrate having a dielectric surface to a first temperature; delivering, through a first port in a gas distribution apparatus, a first gas mixture of metal-organic precursor gases that comprises indium, gallium, zinc, and a first carrier gas to the dielectric surface that is disposed in a processing region a processing chamber; delivering, through a second port in the gas distribution apparatus, a second gas mixture that comprises at least an oxidizing gas and a second carrier gas to the dielectric surface disposed in the processing region of the processing chamber; and delivering radio frequency (RF) energy, to form a plasma disposed between the gas distribution apparatus and the dielectric surface, wherein the plasma comprises the first metal-organic precursor gas mixture and the second oxygen-comprising precursor gas mixture, to form an IGZO layer on the dielectric surface.