METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film comprising a first element, a second element different from the first element, and a third element different from the first element and the second element, by performing a cycle a predetermined number of times, the cycle comprising:
(a) forming a first layer comprising the first element by supplying a gas containing the first element to the substrate, wherein the first layer comprises at least one of: a discontinuous layer, a continuous layer, and a layer in which at least one of the discontinuous layer and the continuous layer is overlapped;(b) forming a second layer comprising the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition wherein a modifying reaction of the first layer by the gas containing the second element is not saturated; and(c) forming a third layer comprising the first element, the second element and the third element by supplying a gas containing the third element to the substrate to modify the second layer under a condition wherein a modifying reaction of the second layer by the gas containing the third element is not saturated.