WAFER PROCESSING METHOD

摘要

Provided is a method of treating a wafer in the state where the wafer is fixed on a support plate with an adhesive composition. Although the wafer is treated by a chemical, heating, or exothermic treatment, the method achieves sufficient adhesiveness during the step of treating a surface of the wafer and allows detachment of the support plate from the wafer without damaging the wafer or leaving the adhesive on the wafer after the wafer treating step. The method of treating a wafer of the present invention includes the steps of: fixing a wafer on a support plate via an adhesive composition containing a curable adhesive component to be crosslinked and cured by light irradiation or heating; crosslinking and curing the curable adhesive component by light irradiation or heating of the adhesive composition; treating a surface of the wafer fixed on the support plate by a chemical, heating, or exothermic treatment; and detaching the support plate from the treated wafer.

主权项

1. A method of treating a wafer, comprising the steps of:
fixing a wafer on a support plate via an adhesive composition containing a curable adhesive component to be crosslinked and cured by light irradiation or heating; crosslinking and curing the curable adhesive component by light irradiation at an integrated illuminance of 300 mJ or more or heating of the adhesive composition; treating a surface of the wafer fixed on the support plate by a chemical, heating, or exothermic treatment; and detaching the support plate from the treated wafer, wherein the adhesive composition has a storage shear modulus at 25° C. of 2.0×105 to 108 Pa, as measured by dynamic viscoelasticity measurement under shear mode and continuous temperature rise from −50° C. to 300° C., after the step of crosslinking and curing the curable adhesive component.