CARBON NANOTUBE TRANSISTOR HAVING EXTENDED CONTACTS

摘要

A semiconductor device includes a substrate that extends along a first direction to define a length and second direction perpendicular to the first direction to define a height. The substrate includes a dielectric layer and at least one gate stack formed on the dielectric layer. A source contact is formed adjacent to a first side of the gate stack and a drain contact formed adjacent to an opposing second side of the gate stack. A carbon nanotube is formed on the source contact and the drain contact. A first portion of the nanotube forms a source. A second portion forms a drain. A third portion is interposed between the source and drain to define a gate channel that extends along the first direction. The source and the drain extend along the second direction and have a greater length than the gate channel.