ION IMPLANTING DEVICE AND CONTROL METHOD OF ION IMPLANTING DEVICE

摘要

Disclosed is a technology for protecting power from an overcurrent generated by the occurrence of load currents. An ion implantation device comprises: a block unit for blocking an ion beam (B) among beam lines; a plasma shower device (40) arranged at a lower side of the beam line than the block unit; and a control unit (60) for forcing the block unit to block the ion beam (B) in an ignition initiating period of the plasma shower device (40). The block unit is arranged at a higher side of the beam line than high-voltage electric field type electrode units which are provided in a plurality of units. A gas supply unit supplies a source gas to the plasma shower device (40). The control unit (60) initiates the supply of the source gas to the gas supply unit after forcing the block unit to block the ion beam (B).